CIRCUIT SIMULATION OF SINGLE FAILURES OF MEMORY MODULES OF ON–BOARD ELECTRONICS

Аннотация

The main objective of the work is the circuit simulation of single failures of a cell of memory
modules under given conditions and parameters of transistors of a memory element during the passage of a single
particle.
The ionization current and critical charges are determined, which lead to a single failure and to the inversion of
the logical state of the memory module cell.
Application area. The results can be used in the design of microprocessor systems of on-board elecronics of
spacecraft.