STRUCTURE AND PHOTOELECTROCHEMICAL PROPERTIES OF ELECTRODEPOSITED Cu2ZnSn(S,Se)4 FILMS

Авторы

  • Urazov Kazhmukhan Amankeldievich
  • Dergacheva Margarita Borisovna
  • Gremenok Valery Feliksovich
  • Zaretskaya Ellen Petrovna

Ключевые слова:

electrodeposition, CZTSSe, kesterite, thin film, photoelectrochemistry.

Аннотация

A one-step electrochemical synthesis of Cu2ZnSnSe4 (CZTSe) and Cu2ZnSnS4 (CZTS) films on Mocoated glass from aqueous electrolytes containing both Cu+2, Zn+2, Sn+2 and Se+4 or S+4 ions has been developed.
Electrodeposition was performed at a constant potential with subsequent annealing at a temperature of 450 °C in air
for 60 minutes. Cu2ZnSn(S0.96,Se0.04)4 films were obtained by sulfurizing electrodeposited Cu2ZnSnSe4 layers in a
sulfur atmosphere at 500 °C for 60 minutes. The structure and phase composition of the films was confirmed by
XRD and Raman spectroscopy. It was confirmed by the PEC method that all films had p-conductivity. It was
established that a change in the chemical composition of the films affects the electrophysical properties, and for
Cu2ZnSn(S,Se)4 layers the photoresponse was 5-6 times higher than for four component compounds

Загрузки

Опубликован

2019-04-04

Как цитировать

Urazov Kazhmukhan Amankeldievich, Dergacheva Margarita Borisovna, Gremenok Valery Feliksovich, & Zaretskaya Ellen Petrovna. (2019). STRUCTURE AND PHOTOELECTROCHEMICAL PROPERTIES OF ELECTRODEPOSITED Cu2ZnSn(S,Se)4 FILMS. Известия НАН РК. Серия химии и технологии, (2), 12–20. извлечено от http://89.250.84.46/chemistry-technology/article/view/1272